Screening and gap generation in bilayer graphene
نویسندگان
چکیده
منابع مشابه
Bias free gap creation in bilayer graphene.
For graphene to be utilized in the digital electronics industry the challenge is to create bandgaps of order 1 eV as simply as possible. The most successful methods for the creation of gaps in graphene are (a) confining the electrons in nanoribbons, which is technically difficult or (b) placing a potential difference across bilayer graphene, which is limited to gaps of around 300 meV for reason...
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The ability to induce an energy band gap in bilayer graphene is an important development in graphene science and opens up potential applications in electronics and photonics. Here we report the emergence of permanent electronic and optical band gaps in bilayer graphene upon adsorption of π electron containing molecules. Adsorption of n- or p-type dopant molecules on one layer results in an asym...
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A tight binding model is used to calculate the band structure of bilayer graphene in the presence of a potential difference between the layers that opens a gap ∆ between the conduction and valence bands. In particular, a self consistent Hartree approximation is used to describe imperfect screening of an external gate, employed primarily to control the density n of electrons on the bilayer, resu...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2013
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.87.245428